Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot

We demonstrate direct detection of individual electron spin states, together with measurement of spin relaxation time (T-1), in silicon metal-oxide-semiconductor-based quantum dots (QD). Excited state spectroscopy of the QD has been performed using a charge-sensing technique. T-1 of single spin excited states has been done in the time domain by a pump-and-probe method. For an odd and an even number of electrons, we found a magnetic field dependent and invariant T-1, respectively.