Journal
PHYSICAL REVIEW LETTERS
Volume 105, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.075502
Keywords
-
Categories
Funding
- EPSRC [EP/C523938/1]
- DFG [CI144/2-1, Gu367/30]
- EU [229205]
- Engineering and Physical Sciences Research Council [EP/C523938/1] Funding Source: researchfish
- EPSRC [EP/C523938/1] Funding Source: UKRI
Ask authors/readers for more resources
We present a quantum-accurate multiscale study of how hydrogen-filled discoidal platelet'' defects grow inside a silicon crystal. Dynamical simulations of a 10-nm-diameter platelet reveal that H-2 molecules form at its internal surfaces, diffuse, and dissociate at its perimeter, where they both induce and stabilize the breaking up of highly stressed silicon bonds. A buildup of H-2 internal pressure is neither needed for nor allowed by this stress-corrosion growth mechanism, at odds with previous models. Slow platelet growth up to micrometric sizes is predicted as a consequence, making atomically smooth crystal cleavage possible in implantation experiments.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available