4.8 Article

Observation of Reentrant Phases Induced by Short-Range Disorder in the Lowest Landau Level of AlxGa1-xAs/Al0.32Ga0.68As Heterostructures

Journal

PHYSICAL REVIEW LETTERS
Volume 105, Issue 7, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.076803

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Funding

  1. NSF [DMR-0084173, DMR-0803730]
  2. State of Florida
  3. DOE [DE-FG-02-98ER45683]
  4. Division Of Materials Research
  5. Direct For Mathematical & Physical Scien [0803730] Funding Source: National Science Foundation

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We report the observation of a reentrant quantum Hall effect in the lowest Landau level between filling factors of 2/3 and 3/5 in a AlxGa1-xAs/Al0.32Ga0.68As heterostructure sample with x 0.85%. A reentrant insulating phase is also observed between filling factors of 2/5 and 1/3, demonstrating particle-hole symmetry between these phases. A sample with x = 0.21% shows much weaker reentrant features, indicating that increased short-range scattering, due to the Al alloy in the conduction channel, aids in the formation of these phases.

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