Journal
PHYSICAL REVIEW LETTERS
Volume 104, Issue 21, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.104.216801
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Funding
- NSERC
- CIFAR
- FQRNT
- NSF [DMR-0084173]
- State of Florida
- DOE
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We report the observation of a new phenomenon of colossal magnetoresistance in a 40 nm wide GaAs quantum well in the presence of an external magnetic field applied parallel to the high-mobility 2D electron layer. In a strong magnetic field, the magnetoresistance is observed to increase by a factor of similar to 300 from 0 to 45 T without the system undergoing any metal-insulator transition. We discuss how this colossal magnetoresistance effect cannot be attributed to the spin degree of freedom or localization physics, but most likely emanates from strong magneto-orbital coupling between the two-dimensional electron gas and the magnetic field. Our observation is consistent with a field-induced 2D-to-3D transition in the confined electronic system.
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