4.8 Article

Fully Overheated Single-Electron Transistor

Journal

PHYSICAL REVIEW LETTERS
Volume 104, Issue 19, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.104.196805

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Funding

  1. Finnish Academy of Science and Letters
  2. Academy of Finland

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We consider the fully overheated single- electron transistor, where the heat balance is determined entirely by electron transfers. We find three distinct transport regimes corresponding to cotunneling, single- electron tunneling, and a competition between the two. We find an anomalous sensitivity to temperature fluctuations at the crossover between the two latter regimes that manifests in an exceptionally large Fano factor of current noise.

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