Journal
PHYSICAL REVIEW LETTERS
Volume 102, Issue 17, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.102.177404
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Funding
- MRSEC Program of the National Science Foundation [DMR-0212302, DMR-0819885]
- Office of Basic Energy Sciences
- U. S. Department of Energy (DOE)
- Los Alamos LDRD funds
- DOE Center for Integrated Nanotechnologies
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We report the first experimental observation of a striking convergence of Auger recombination rates in nanocrystals of both direct- (InAs, PbSe, CdSe) and indirect-gap (Ge) semiconductors, which is in contrast to a dramatic difference (by up to 4-5 orders of magnitude) in the Auger decay rates in respective bulk solids. To rationalize this finding, we invoke the effect of confinement-induced mixing between states with different translational momenta, which diminishes the impact of the bulk-semiconductor band structure on multiexciton interactions in nanocrystalline materials.
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