4.8 Article

Spin-Polarized Inelastic Tunneling through Insulating Barriers

Journal

PHYSICAL REVIEW LETTERS
Volume 102, Issue 17, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.102.176801

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Funding

  1. French ANR Program of Nanosciences and Nanotechnology (PNANO)

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Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

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