4.8 Article

Indistinguishable Photons from Independent Semiconductor Nanostructures

Journal

PHYSICAL REVIEW LETTERS
Volume 103, Issue 5, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.103.053601

Keywords

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Funding

  1. JST/SORST
  2. MEXT
  3. NICT
  4. MURI
  5. ARMY
  6. DAAD [19-03-1-0199]

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We demonstrate quantum interference between photons generated by the radiative decay processes of excitons that are bound to isolated fluorine donor impurities in ZnSe/ZnMgSe quantum-well nanostructures. The ability to generate single photons from these devices is confirmed by autocorrelation experiments, and the indistinguishability of photons emitted from two independent nanostructures is confirmed via a Hong-Ou-Mandel dip. These results indicate that donor impurities in appropriately engineered semiconductor structures can portray atomlike homogeneity and coherence properties, potentially enabling scalable technologies for future large-scale optical quantum computers and quantum communication networks.

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