Journal
PHYSICAL REVIEW LETTERS
Volume 101, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.101.116808
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Funding
- EPSRC, UK [EP/C535553/1, GR/S94148, EP/E025722/1]
- EPSRC [EP/E025722/1, EP/E010210/1, EP/G004447/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G004447/1, EP/C535553/1, EP/E010210/1, GR/S94148/01, EP/E025722/1] Funding Source: researchfish
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High-resolution x-ray photoemission spectroscopy, infrared reflectivity and Hall effect measurements, combined with surface space-charge calculations, are used to show that electron accumulation occurs at the surface of undoped single-crystalline In2O3. From a combination of measurements performed on undoped and heavily Sn-doped samples, the charge neutrality level is shown to lie similar to 0.4 eV above the conduction band minimum in In2O3, explaining the electron accumulation at the surface of undoped material, the propensity for n-type conductivity, and the ease of n-type doping in In2O3, and hence its use as a transparent conducting oxide material.
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