Journal
PHYSICAL REVIEW LETTERS
Volume 101, Issue 14, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.101.147201
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Funding
- NSF [DMR-0210915]
- ONR
- ONR [N00014-03-1-0692]
- DOE [DE-AC06-76RL01830]
- U. S. Department of Energy [DE-AC02-05CH11231]
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A large exchange splitting of the conduction band in ultrathin films of the ferromagnetic semiconductor EuO was determined quantitatively, by using EuO as a tunnel barrier and fitting the current-voltage characteristics and temperature dependence to tunneling theory. This exchange splitting leads to different tunnel barrier heights for spin-up and spin-down electrons and is large enough to produce a near-fully spin-polarized current. Moreover, the magnetic properties of these ultrathin films (< 6 nm) show a reduction in Curie temperature with decreasing thickness, in agreement with theoretical calculation.
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