Admittance and noise in an electrically driven nanostructure: Interplay between quantum coherence and statistics

We investigate the interplay between the quantum coherence and statistics in electrically driven nanostructures. We obtain an expression for the admittance and the current noise for a driven nanocapacitor in terms of the Floquet scattering matrix and derive a nonequilibrium fluctuation-dissipation relation. As an interplay between the quantum phase coherence and the many-body correlation, the admittance has peak values whenever the noise power shows a step as a function of the nearby gate voltage. Our theory is demonstrated by calculating the admittance and noise of driven double-quantum dots.