Journal
PHYSICAL REVIEW B
Volume 90, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.90.155413
Keywords
-
Funding
- Materials Design Network
- EPSRC [EP/G004447/2, EP/K000144/1, EP/K000136/1]
- Science Foundation Ireland (PI) [06/IN.1/I92, 06/IN.1/I92/EC07]
- UK's HPC Materials Chemistry Consortium - EPSRC [EP/L000202]
- European Research and Development Agency (ERDF)
- Engineering and Physical Sciences Research Council [EP/H012575/1, EP/L000202/1, EP/K000136/1, EP/K000144/1, EP/G004447/2] Funding Source: researchfish
- EPSRC [EP/K000144/1, EP/G004447/2, EP/L000202/1, EP/K000136/1, EP/H012575/1] Funding Source: UKRI
Ask authors/readers for more resources
The surface band bending and electronic properties of SnO2(101) films grown on r-sapphire by plasma-assisted molecular beam epitaxy have been studied by Fourier-transform infrared spectroscopy (FTIR), x-ray photoemission spectroscopy (XPS), Hall effect, and electrochemical capacitance-voltage measurements. The XPS results were correlated with density functional theory calculation of the partial density of states in the valence-band and semicore levels. Good agreement was found between theory and experiment with a small offset of the Sn 4d levels. Homogeneous Sb-doped SnO2 films allowed for the calculation of the bulk Fermi level with respect to the conduction-band minimum within the k.p carrier statistics model. The band bending and carrier concentration as a function of depth were obtained from the capacitance-voltage characteristics and model space charge calculations of the Mott-Schottky plots at the surface of Sb-doped SnO2 films. It was quantitatively demonstrated that SnO2 films have downward band bending and surface electron accumulation. The surface band bending, unoccupied donor surface-state density, and width of the accumulation region all decrease with increasing Sb concentration.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available