Journal
PHYSICAL REVIEW B
Volume 90, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.90.245205
Keywords
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Funding
- Research Grants Council, University Grants Committee, Hong Kong [CUHK 401011]
- Chinese University of Hong Kong (Focused Investments Scheme)
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We propose a general framework of nonlinear optics induced by non-Abelian Berry curvature in time-reversalinvariant (TRI) insulators. We find that the third-order response of a TRI insulator under optical and terahertz light fields is directly related to the integration of the non-Abelian Berry curvature over the Brillouin zone. We apply the result to insulators with rotational symmetry near the band edge. Under resonant excitations, the optical susceptibility is proportional to the flux of the Berry curvature through the iso-energy surface, which is equal to the Chern number of the surface times 2 pi For the III-V compound semiconductors, microscopic calculations based on the six-band model give a third-order susceptibility with the Chern number of the iso-energy surface equal to 3.
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