Related references
Note: Only part of the references are listed.Ge doped GaN with controllable high carrier concentration for plasmonic applications
Ronny Kirste et al.
APPLIED PHYSICS LETTERS (2013)
Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 1020 cm-3
Matthias Wieneke et al.
APPLIED PHYSICS LETTERS (2013)
Anisotropy of effective electron masses in highly doped nonpolar GaN
Martin Feneberg et al.
APPLIED PHYSICS LETTERS (2013)
Influence of doping level on shift of the absorption edge of gallium nitride films (Burstein-Moss effect)
S. N. Svitasheva et al.
APPLIED SURFACE SCIENCE (2013)
Analysis of plasmonic properties of heavily doped semiconductors using full band structure calculations
Jesper Jung et al.
JOURNAL OF APPLIED PHYSICS (2013)
Si Doping of GaN in Hydride Vapor-Phase Epitaxy
E. Richter et al.
JOURNAL OF ELECTRONIC MATERIALS (2013)
Anisotropic absorption and emission of bulk (1(1)over-bar00) AlN
Martin Feneberg et al.
PHYSICAL REVIEW B (2013)
High Si and Ge n-type doping of GaN doping - Limits and impact on stress
S. Fritze et al.
APPLIED PHYSICS LETTERS (2012)
Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes
M. D. Neumann et al.
JOURNAL OF APPLIED PHYSICS (2011)
Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
Georg Rossbach et al.
PHYSICAL REVIEW B (2011)
Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes
Luiz Claudio de Carvalho et al.
PHYSICAL REVIEW B (2011)
Optical Absorption in Degenerately Doped Semiconductors: Mott Transition or Mahan Excitons?
Andre Schleife et al.
PHYSICAL REVIEW LETTERS (2011)
All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation
Ryota Ishii et al.
PHYSICAL REVIEW B (2010)
Identification of van Hove singularities in the GaN dielectric function: a comparison of the cubic and hexagonal phase
C. Cobet et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2009)
Observation of Fermi-edge excitons and exciton-phonon complexes in the optical response of heavily doped n-type wurtzite GaN
S. Shokhovets et al.
PHYSICAL REVIEW B (2009)
Band gap narrowing and radiative efficiency of silicon doped GaN
H. P. D. Schenk et al.
JOURNAL OF APPLIED PHYSICS (2008)
Recombination of free and bound excitons in GaN
B. Monemar et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2008)
Mahan excitons in degenerate wurtzite InN:: Photoluminescence spectroscopy and reflectivity measurements
Martin Feneberg et al.
PHYSICAL REVIEW B (2008)
Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors
S. Shokhovets et al.
PHYSICAL REVIEW B (2008)
On the lattice parameters of GaN
V. Darakchieva et al.
APPLIED PHYSICS LETTERS (2007)
Stress and density of defects in Si-doped GaN
Z. Chine et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2006)
Band-gap renormalization in highly excited GaN
T Nagai et al.
APPLIED PHYSICS LETTERS (2004)
Dielectric function of nitride semiconductors: Recent experimental results
R Goldhahn
ACTA PHYSICA POLONICA A (2003)
Identification of Si and O donors in hydride-vapor-phase epitaxial GaN
WJ Moore et al.
APPLIED PHYSICS LETTERS (2001)
Free excitons in wurtzite GaN -: art. no. 115204
AV Rodina et al.
PHYSICAL REVIEW B (2001)
Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN -: art. no. 045213
B Arnaudov et al.
PHYSICAL REVIEW B (2001)
Combined effects of screening and band gap renormalization on the energy of optical transitions in ZnO and GaN
DC Reynolds et al.
JOURNAL OF APPLIED PHYSICS (2000)