Journal
PHYSICAL REVIEW B
Volume 90, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.90.241203
Keywords
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Funding
- NKBRP [2014CB848700]
- NSFC [11374032, 11121403]
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In this Rapid Communication, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of Si-29 ((pSi) = 4.7%) is about four times larger than that of C-13 ((pC) = 1.1%), the electron spin coherence time of defect centers in SiC nuclear spin bath in a strong magnetic field (B > 300 G) is longer than that of nitrogen-vacancy (NV) centers in C-13 nuclear spin bath in diamond. In addition to the smaller gyromagnetic ratio of Si-29, and the larger bond length in SiC lattice, a crucial reason for this counterintuitive result is the suppression of the heteronuclear-spin flip-flop process in a finite magnetic field. Our results show that electron spin of defect centers in SiC are excellent candidates for solid state spin qubit in quantum information processing.
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