Journal
PHYSICAL REVIEW B
Volume 89, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.89.085204
Keywords
-
Funding
- NSF [DMR-0906805, OCI-1053575, NSF DMR07-0072N]
- UCSB Solid State Lighting and Energy Center
- Center for Low Energy Systems Technology (LEAST)
- STARnet phase of the Focus Center Research Program (FCRP), an SRC program
- MARCO
- DARPA
- Institute for Energy Efficiency
Ask authors/readers for more resources
Using hybrid functional calculations, we investigate the formation of DX centers in GaN and AlN. We find that O, Si, and Ge are shallow donors in GaN, but form stable DX centers in AlN for Fermi-level positions near the conduction band. Using a linear interpolation, we estimate the composition at which the onset of DX behavior will occur in AlGaN alloys. Based on these predictions, we identify Si as the most effective donor for high Al-content AlGaN, and explain a number of seemingly conflicting experimental results for Si-doped AlGaN. Although based on size matching Ge was expected to be superior to Si as a shallow donor, it actually turns out to be more prone to DX-center formation.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available