4.6 Article

Strongly interacting holes in Ge/Si nanowires

Journal

PHYSICAL REVIEW B
Volume 90, Issue 15, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.90.155437

Keywords

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Funding

  1. Swiss NF
  2. NCCR QSIT
  3. ECFP7-ICT initiative under project SiSPIN [323841]

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We consider holes confined to Ge/Si core/shell nanowires subject to strong Rashba spin-orbit interaction and screened Coulomb interaction. Such wires can, for instance, serve as host systems for Majorana bound states. Starting from a microscopic model, we find that the Coulomb interaction strongly influences the properties of experimentally realistic wires. To show this, a Luttinger liquid description is derived based on a renormalization group analysis. This description in turn allows us to calculate the scaling exponents of various correlation functions as a function of the microscopic system parameters. It furthermore permits us to investigate the effect of Coulomb interaction on a small magnetic field, which opens a strongly anisotropic partial gap.

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