Journal
PHYSICAL REVIEW B
Volume 90, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.90.035302
Keywords
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Funding
- Dartmouth and UW-Madison
- Army Research Office [W911NF-12-1-0607]
- NSF [DMR-1104821]
- DOE [DE-FG02-03ER46028]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1104821] Funding Source: National Science Foundation
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We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic field that we interpret as arising from the valley degree of freedom. The interplay of valley and Zeeman splittings is suggested by the presence of side peaks, revealing a zero-field valley splitting between 0.28 to 0.34 meV. A zero-bias conductance peak for nonzero magnetic field, a phenomenon consistent with valley nonconservation in tunneling, is observed in two samples.
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