Journal
PHYSICAL REVIEW B
Volume 89, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.89.125418
Keywords
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Funding
- National Key Basic Research Program of China [2014CB920903, 2013CBA01603]
- National Science Foundation [11374035, 11004010]
- program for New Century Excellent Talents in University of the Ministry of Education of China [NCET-13-0054]
- Beijing Higher Education Young Elite Teacher Project [YETP0238]
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It is well established that some kinds of lattice deformations in graphene monolayer, which change electron hopping in the sublattice and affect in-plane motion of electrons, may induce out-of-plane pseudomagnetic fields as large as 100 T. Here, we demonstrate that stacking misorientation in graphene bilayers mimics the effect of huge in-plane pseudomagnetic fields greater than 1000 T on the interlayer hopping of electrons. As well as addressing the similarity between the effect of in-plane pseudomagnetic fields and the twisting on the electronic band structure of the Bernal graphene bilayer, we point out that the in-plane magnetic fields (or twisting) could modify the low-energy pseudospin texture of the graphene bilayer (the pseudospin winding number is reduced from 2 to 1), thereby changing the chiralities of quasiparticles from those of spin 1 to those of spin 1/2. Our results illustrate the possibility of controllably manipulating electronic properties of Bernal graphene bilayer by introducing the in-plane magnetic field or twisting.
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