Journal
PHYSICAL REVIEW B
Volume 89, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.89.235105
Keywords
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Funding
- National Science Foundation [DMR11-24696]
- Office of Naval Research [N00014-12-1-1033]
- Department of Energy [DE-FG02-07ER46431]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1124696] Funding Source: National Science Foundation
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We demonstrate a new band engineering strategy for the design of semiconductor perovskite ferroelectrics for photovoltaic and other applications from first principles. We study six ferroelectric solid solutions created by partially substituting Zn2+ for Nb5+ into the parent KNbO3 material, combined with charge compensation at the A sites with different combinations of higher valence cations. Our first-principles calculations with the HSE06 functional yield a low band gap of only 2.1 eV for the 75% KNbO3-25%( Sr1/2La1/2)( Zn1/2Nb1/2) O-3 solid solution, and this can be lowered further by 0.6 eV under strain through polarization rotation. The large polarization, especially under strain, of these materials provides a charge separation route by the bulk photovoltaic effect that could potentially allow power conversion efficiency beyond the Shockley-Queisser limit. This band engineering strategy is applicable to other perovskites and should be realizable by standard solid-state synthesis and thin film growth methods.
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