Journal
PHYSICAL REVIEW B
Volume 87, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.87.125405
Keywords
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Funding
- Welch Foundation [F-1255]
- DOE (Division of Materials Science and Engineering) [DE-FG03-02ER45958]
- MOST Project of China [2012CB921300, 2011CBA00100]
- NSFC [91121004]
- CPSF [20100480147, 201104030]
- NSF of China [11225418, 11174337]
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We present a systematic study on the influence of Rashba spin-orbit coupling, interlayer potential difference, and exchange field on the topological properties of bilayer graphene. In the presence of only Rashba spin-orbit coupling and interlayer potential difference, the band gap opening due to broken out-of-plane inversion symmetry offers new possibilities of realizing tunable topological phase transitions by varying an external gate voltage. We find a two-dimensional Z(2) topological insulator phase and a quantum valley Hall phase in AB-stacked bilayer graphene and obtain their effective low-energy Hamiltonians near the Dirac points. For AA stacking, we do not find any topological insulator phase in the presence of large Rashba spin-orbit coupling. When the exchange field is also turned on, the bilayer system exhibits a rich variety of topological phases including a quantum anomalous Hall phase, and we obtain the phase diagram as a function of the Rashba spin-orbit coupling, interlayer potential difference, and exchange field. DOI: 10.1103/PhysRevB.87.125405
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