Related references
Note: Only part of the references are listed.Single-Layer MoS2 Phototransistors
Zongyou Yin et al.
ACS NANO (2012)
Controllable p-n Switching Behaviors of GaAs Nanowires via an Interface Effect
Ning Han et al.
ACS NANO (2012)
Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
Yi-Hsien Lee et al.
ADVANCED MATERIALS (2012)
MoS2 Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming
Han Liu et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Ambipolar MoS2 Thin Flake Transistors
Yijin Zhang et al.
NANO LETTERS (2012)
Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
Keng-Ku Liu et al.
NANO LETTERS (2012)
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Qing Hua Wang et al.
NATURE NANOTECHNOLOGY (2012)
Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides
Ashwin Ramasubramaniam
PHYSICAL REVIEW B (2012)
Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2
Tawinan Cheiwchanchamnangij et al.
PHYSICAL REVIEW B (2012)
van der Waals Bonding in Layered Compounds from Advanced Density-Functional First-Principles Calculations
T. Bjorkman et al.
PHYSICAL REVIEW LETTERS (2012)
Large-Area Vapor-Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate
Yongjie Zhan et al.
SMALL (2012)
Optical Identification of Single- and Few-Layer MoS2 Sheets
Hai Li et al.
SMALL (2012)
Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
Subhamoy Ghatak et al.
ACS NANO (2011)
Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication
Zhiyuan Zeng et al.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION (2011)
Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
Leitao Liu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Electrical transport properties of graphene on SiO2 with specific surface structures
K. Nagashio et al.
JOURNAL OF APPLIED PHYSICS (2011)
A Comparative Study of Lattice Dynamics of Three- and Two-Dimensional MoS2
C. Ataca et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2011)
Functionalization of Single-Layer MoS2 Honeycomb Structures
C. Ataca et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2011)
Single-layer MoS2 transistors
B. Radisavljevic et al.
NATURE NANOTECHNOLOGY (2011)
Band-gap transition induced by interlayer van der Waals interaction in MoS2
S. W. Han et al.
PHYSICAL REVIEW B (2011)
Variational pseudo-self-interaction-corrected density functional approach to the ab initio description of correlated solids and molecules
A. Filippetti et al.
PHYSICAL REVIEW B (2011)
Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2
A. Kuc et al.
PHYSICAL REVIEW B (2011)
Semiconducting Electronic Property of Graphene Adsorbed on (0001) Surfaces of SiO2
Nguyen Thanh Cuong et al.
PHYSICAL REVIEW LETTERS (2011)
Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2 substrates
P. Joshi et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2010)
Emerging Photoluminescence in Monolayer MoS2
Andrea Splendiani et al.
NANO LETTERS (2010)
Atomically Thin MoS2: A New Direct-Gap Semiconductor
Kin Fai Mak et al.
PHYSICAL REVIEW LETTERS (2010)
Electron doping and magnetic moment formation in N- and C-doped MgO
A. Droghetti et al.
APPLIED PHYSICS LETTERS (2009)
Comment on Theoretical Description of Carrier Mediated Magnetism in Cobalt Doped ZnO
Stefano Sanvito et al.
PHYSICAL REVIEW LETTERS (2009)
First-principles studies of water adsorption on graphene: The role of the substrate
Tim O. Wehling et al.
APPLIED PHYSICS LETTERS (2008)
Predicting d0 magnetism: Self-interaction correction scheme
A. Droghetti et al.
PHYSICAL REVIEW B (2008)
Impurity-ion pair induced high-temperature ferromagnetism in Co-doped ZnO
C. D. Pemmaraju et al.
PHYSICAL REVIEW B (2008)
Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors
Xinran Wang et al.
PHYSICAL REVIEW LETTERS (2008)
Measurement of scattering rate and minimum conductivity in graphene
Y. -W. Tan et al.
PHYSICAL REVIEW LETTERS (2007)
A self-consistent theory for graphene transport
Shaffique Adam et al.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA (2007)
Substrate-induced bandgap opening in epitaxial graphene
S. Y. Zhou et al.
NATURE MATERIALS (2007)
Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides
Anthony Ayari et al.
JOURNAL OF APPLIED PHYSICS (2007)
Atomic-orbital-based approximate self-interaction correction scheme for molecules and solids
C. D. Pemmaraju et al.
PHYSICAL REVIEW B (2007)
Size-dependent structure of MoS2 nanocrystals
Jeppe V. Lauritsen et al.
NATURE NANOTECHNOLOGY (2007)
Band offsets of high K gate oxides on III-V semiconductors
J. Robertson et al.
JOURNAL OF APPLIED PHYSICS (2006)
Hybrid functionals based on a screened Coulomb potential (vol 118, pg 8207, 2003)
Jochen Heyd et al.
JOURNAL OF CHEMICAL PHYSICS (2006)
Hybrid functionals based on a screened Coulomb potential
J Heyd et al.
JOURNAL OF CHEMICAL PHYSICS (2003)
The SIESTA method for ab initio order-N materials simulation
JM Soler et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
Numerical atomic orbitals for linear-scaling calculations -: art. no. 235111
J Junquera et al.
PHYSICAL REVIEW B (2001)
Physical structure and inversion charge at a semiconductor interface with a crystalline oxide
RA McKee et al.
SCIENCE (2001)
Share Paper
