Journal
PHYSICAL REVIEW B
Volume 88, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.88.081407
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Funding
- DARPA
- MesoDynamic Architecture Program (MESO) [N66001-11-1-4105]
- FENA
- DOE
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Thin films of topological insulator Bi2Se3 were deposited directly on insulating ferromagnetic EuS. Unusual negative magnetoresistance was observed near the zero field below the Curie temperature T-C, resembling the weak localization effect; whereas the usual positive magnetoresistance was recovered above T-C. Such negative magnetoresistance was only observed for Bi2Se3 layers thinner than t similar to 4 nm, when its top and bottom surfaces are coupled. These results provide evidence for a proximity effect between a topological insulator and an insulating ferromagnet, laying the foundation for future realization of the half-integer quantized anomalous Hall effect in three-dimensional topological insulators.
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