Journal
PHYSICAL REVIEW B
Volume 87, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.87.081304
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Funding
- CNPq
- CAPES
- FAPESB
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The spin-orbit interaction strength for electrons in III-V semiconductor heterojunctions and the corresponding in-plane anisotropy are theoretically studied, considering Rashba and Dresselhaus contributions. Starting from a variational solution of Kane's effective Hamiltonian for the Rashba-split subbands, the total spin-orbit splitting at the Fermi level of the two-dimensional electron gas in III-V heterojunctions is calculated analytically, as a function of the electron density and wave-vector direction, by adding the Dresselhaus contribution within quasidegenerate first-order perturbation theory. Available GaAs and InGaAs experimental data are discussed. Effects of the barrier penetration are identified, and the spin-orbit anisotropy is shown to be determined by more than one parameter, even in the small-k limit, contrary to the commonly used alpha/beta (where alpha is the Rashba and beta the Dresselhaus interaction) single-parameter picture. DOI: 10.1103/PhysRevB.87.081304
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