Journal
PHYSICAL REVIEW B
Volume 88, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.88.115145
Keywords
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Funding
- Japan Society for the Promotion of Science
- Japan Science and Technology Agency-Core Research for Evolutional Science and Technology
- Ministry of Education, Culture, Sports, Science, and Technology of Japan
- WPI Research Center
- Advanced Institute for Materials Research of Japan
- National Key Basic Research of China [2011CBA00111]
- National Natural Science Foundation of China
- Chinese Academy of Sciences Large-scale Scientific Facility [U1232139]
- Grants-in-Aid for Scientific Research [23224010, 24740215] Funding Source: KAKEN
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We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) of layered chalcogenide 1T-TaS2-xSex to elucidate the electronic states especially relevant to the occurrence of superconductivity. We found a direct evidence for a Ta-5d-derived electron pocket associated with the superconductivity, which is fragile against a Mott-gap opening observed in the insulating ground state for S-rich samples. In particular, a strong electron-electron interaction-induced Mott gap driven by a Ta 5d orbital also exists in the metallic ground state for Se-rich samples, while finite ARPES intensity near the Fermi level likely originating from a Se 4p orbital survives, indicative of the orbital-selective nature of the Mott transition. Present results suggest that effective electron correlation and p-d hybridization play a crucial role to tune the superconductivity and Mott metal-insulator transition.
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