Journal
PHYSICAL REVIEW B
Volume 87, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.87.121301
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Funding
- UK EPSRC Grant [EP/H002294/1]
- EU ERC Advanced Grant [268066]
- Ministry of Education of the Czech Republic Grant [LM2011026]
- Praemium Academiae of the Academy of Sciences of the Czech Republic
- EPSRC [EP/H002294/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H002294/1] Funding Source: researchfish
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We investigate the relationship between the Curie temperature T-C and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both T-C and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band. DOI: 10.1103/PhysRevB.87.121301
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