Journal
PHYSICAL REVIEW B
Volume 85, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.045445
Keywords
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Funding
- China Postdoctroal Science Foundation [20100480147, 201104030]
- Peking University
- NSF [DMR 0906025]
- Welch Foundation [F-1255]
- DOE (Division of Materials Science and Engineering) [DE-FG03-02ER45958]
- Texas Advanced Research Program
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0906025] Funding Source: National Science Foundation
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We study the possibility of realizing quantum anomalous Hall (QAH) effect with tunable Chern number through doping magnetic elements in a multilayer topological insulator film. We find that high Chern number QAH phases exist in ideal neutral samples and can make transition to another QAH phase directly by means of tuning exchange field strength or sample thickness. With the help of an extended Haldane model, we demonstrate the physical mechanism of the tunable Chern number QAH phase. We show that the high Chern number QAH phases are robust against weak magnetic and nonmagnetic disorders.
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