Journal
PHYSICAL REVIEW B
Volume 86, Issue 10, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.100102
Keywords
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Funding
- US Department of Energy, Basic Energy Sciences, Materials Science and Engineering Division
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The healing effect of intense electronic energy deposition arising during swift heavy ion (SHI) irradiation is demonstrated in the case of 3C-SiC damaged by nuclear energy deposition. Experimental (ion channeling experiments) and computational (molecular dynamics simulations) studies provide consistent indications of disorder decrease after SHI irradiation. Furthermore, both methods establish that SHI-induced recrystallization takes place at amorphous-crystalline interfaces. The recovery process is unambiguously accounted for by the thermal spike phenomenon.
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