Journal
PHYSICAL REVIEW B
Volume 85, Issue 10, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.104101
Keywords
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Funding
- US Department of Energy, Office of Basic Energy Sciences [DE-SC0005245]
- USF [R070699]
- NSF [DMR-1066158, DMR-0701558]
- ARO [W911NF-12-1-0085]
- ONR [N00014-11-1-0384, N00014-08-1-0915, N00014-07-1-0825]
- Department of Energy, Office of Basic Energy Sciences [ER-46612]
- Swiss National Science Foundation
- MRI from NSF [0722625]
- U.S. Department of Energy (DOE) [DE-SC0005245] Funding Source: U.S. Department of Energy (DOE)
- Division Of Computer and Network Systems
- Direct For Computer & Info Scie & Enginr [0959124] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1066158] Funding Source: National Science Foundation
- EPSCoR
- Office Of The Director [0918970] Funding Source: National Science Foundation
Ask authors/readers for more resources
A first-principles-based effective Hamiltonian technique is developed to study flexoelectricity in (Ba0.5Sr0.5)TiO3 thin films of different thicknesses in their paraelectric phase. The magnitude as well as sign of individual components of the flexoelectric tensor are reported, which provides answers to existing controversies. The use of this numerical tool also allows us to show that flexoelectric coefficients depend strongly on the film's thickness and temperature. Such dependence is explained using the relationship between the flexoelectric coefficients and the dielectric susceptibility.
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