Journal
PHYSICAL REVIEW B
Volume 86, Issue 16, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.165422
Keywords
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Funding
- Texas Instruments, the Semiconductor Research Corporation (SRC)
- Microelectronics Advanced Research Corporation (MARCO)
- Focus Center Research Project (FCRP) for Materials, Structures and Devices (MSD)
- Samsung Electronics Ltd.
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One of the factors limiting electron mobility in supported graphene is remote phonon scattering. We formulate the theory of the coupling between graphene plasmon and substrate surface polar phonon (SPP) modes and find that it leads to the formation of interfacial plasmon-phonon (IPP) modes, from which the phenomena of dynamic antiscreening and screening of remote phonons emerge. The remote phonon-limited mobilities for SiO2, HfO2, h-BN, and Al2O3 substrates are computed using our theory. We find that hexagonal boron nitride (h-BN) yields the highest peak mobility, but in the practically useful high-density range, the mobility in HfO2-supported graphene is high, despite the fact that HfO2 is a high-k dielectric with low-frequency modes. Our theory predicts that the strong temperature dependence of the total mobility effectively vanishes at very high carrier concentrations. The effects of polycrystallinity on IPP scattering are also discussed.
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