Journal
PHYSICAL REVIEW B
Volume 85, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.235131
Keywords
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Funding
- Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
- Program of Basic Research Development of China [2011CB921901]
- NSFC [11074143]
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We consider a junction between surface p type and surface n type on an ideal topological insulator in which carrier type and density in two adjacent regions are locally controlled by composition graded doping or electrical gating. Such junction setting on topological insulators are fundamental for possible device application. A single gapless chiral edge state localized along the junction interface appears in the presence of an external magnetic field, and it can be probed by scanning tunneling microscopy and transport measurements. We propose to realize this topological p-n junction in (Bi1-xSbx)(2)Te-3, which has insulating bulk properties and a tunable surface state across the Dirac cone.
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