Journal
PHYSICAL REVIEW B
Volume 85, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.245311
Keywords
-
Funding
- Deutsche Forschungsgemeinschaft (DFG) [KA 3262/2-1]
- IHP International Fellowship Award
Ask authors/readers for more resources
We report on the experimental and theoretical investigation of the relaxation in Ge-rich SiGe/Ge/Si heterostructures. The experimental x-ray diffraction data are interpreted with the help of a model including both edge and 60 degrees misfit dislocations in the calculated x-ray scattering intensity. Our results show that highly positionally correlated edge dislocations dominate in the relaxation of the compressive strain at the Ge/Si interface, while a smaller tensile strain at the SiGe/Ge interfaces released by uncorrelated/little correlated 60 degrees dislocations.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available