Journal
PHYSICAL REVIEW B
Volume 86, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.081203
Keywords
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Funding
- Department of Science and Technology, Government of India
- UKIERI
- IISc Centenary Postdoctoral Fellowship
- Engineering and Physical Sciences Research Council [EP/K004077/1] Funding Source: researchfish
- EPSRC [EP/K004077/1] Funding Source: UKRI
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Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read heads. We show that a colossal nonsaturating linear magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field, reaching nearly 10 000% at 8 T, thus surpassing many known nonmagnetic materials that exhibit giant NLMR. The temperature dependence and mobility analysis indicate that the NLMR has a purely classical origin, driven by nanoscale inhomogeneities. A large NLMR combined with small device dimensions makes these systems an attractive candidate for on-chip magnetic field sensing.
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