Related references
Note: Only part of the references are listed.High Hole-Mobility Strained-Ge/Si0.6Ge0.4 P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness
Pouya Hashemi et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors
Yong-Hua Li et al.
APPLIED PHYSICS LETTERS (2009)
Design of tunneling field-effect transistors using strained-silicon/strained-germanium type-II staggered heterojunctions
Osama M. Nayfeh et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs
Stephen W. Bedell et al.
IEEE ELECTRON DEVICE LETTERS (2008)
nextnano: General purpose 3-D simulations
Stefan Birner et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
High mobility strained ge pMOSFETs with high-κ/metal gate
Gareth Nicholas et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Ab initio all-electron calculation of absolute volume deformation potentials of IV-IV, III-V, and II-VI semiconductors:: The chemical trends
Yong-Hua Li et al.
PHYSICAL REVIEW B (2006)
High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: Experiments
T Krishnamohan et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si(100)
JF Liu et al.
PHYSICAL REVIEW B (2004)
Strain in coherent-wave SiGe/Si superlattices
HK Shin et al.
SOLID STATE COMMUNICATIONS (2000)
Share Paper
