4.6 Article

Atomic control of strain in freestanding graphene

Journal

PHYSICAL REVIEW B
Volume 85, Issue 12, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.121406

Keywords

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Funding

  1. Office of Naval Research (ONR) [N00014-10-1-0181, N00014-11-1-0384, N00014-08-1-0915, N00014-07-1-0825]
  2. National Science Foundation (NSF) [DMR-0855358, DMR-0701558, DMR-1066158, MRI-0959124, DMR-0821159]
  3. ARO [W911NF-12-1-0085]
  4. Office of Basic Energy Sciences [ER-46612]
  5. HPCMO of the US Department of Defense
  6. Taishan Overseas Scholar program
  7. National Natural Science Foundation of China [51172113]
  8. Shandong Natural Science Foundation [JQ201118]
  9. Research Corporation for Science Advancement
  10. Direct For Mathematical & Physical Scien
  11. Division Of Materials Research [0855358] Funding Source: National Science Foundation
  12. EPSCoR
  13. Office Of The Director [0918970] Funding Source: National Science Foundation

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In this study, we describe an experimental approach based on constant-current scanning tunneling spectroscopy to controllably and reversibly pull freestanding graphene membranes up to 35 nm from their equilibrium height. In addition, we present scanning tunneling microscopy (STM) images of freestanding graphene membranes with atomic resolution. Atomic-scale corrugation amplitudes 20 times larger than the STM electronic corrugation for graphene on a substrate were observed. The freestanding graphene membrane responds to a local attractive force created at the STM tip as a highly conductive yet flexible grounding plane with an elastic restoring force. We indicate possible applications of our method in the controlled creation of pseudomagnetic fields by strain on single-layer graphene.

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