Journal
PHYSICAL REVIEW B
Volume 86, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.115334
Keywords
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Funding
- Deutsche Forschungsgemeinschaft [Be 1346/20-1]
- U.S. Department of Energy at Lawrence Livermore National Laboratory [DE-AC52-07A27344]
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Hydrogen doped ZnO thin films were deposited by radio frequency magnetron sputtering from a ceramic target on c-plane sapphire and fused silica using H-2 and O-2 as reactive gases. Structural analysis revealed that all films are polycrystalline with the c axis oriented perpendicularly to the substrate surface. The lateral grain size was strongly affected by the oxygen content of the sputtering gas and decreased dramatically above a critical content of 4.5 %. We were able to adjust the carrier density of the films by the deposition parameters to any value between 10(14) and 2 x 10(20) cm(-3). Using temperature-dependent Hall-effect measurements we identified thermionic emission over Coulomb-barriers created by surface trap states at the grain boundaries and tunneling effects to dominate the carrier transport. Preparing and thoroughly characterizing the films is a prerequisite for our investigation of the dependence of the optical band gap energy on the carrier density. We use results from experiment as well as first-principles calculations (including Burstein-Moss shift, band gap renormalization, and excitonic effects) in order to understand the mechanisms that determine how free electrons influence the energy position of the optical absorption onset.
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