Journal
PHYSICAL REVIEW B
Volume 85, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.085302
Keywords
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Funding
- NICT
- MEXT
- NIST [60NANB9D9170]
- NSF [CCR-08 29694]
- University of Tokyo
- NTT Basic Research Laboratories
- Japan Society for the Promotion of Science (JSPS)
- DFG [Graduiertenkolleg GRK-1464]
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It has been shown that the excitons bound to individual donors in epitaxially grown ZnMgSe/ZnSe quantum-well (QW) nanostructures provide suitable single-photon sources and optically controllable qubits for quantum information technology. Here we demonstrate ion implantation as an alternative fluorine doping method for ZnMgSe/ZnSe QWs. Photoluminescence measurements of F-implanted ZnSe QWs show the correlation between the number of sharp recombination peaks of F-donor bound excitons and the implantation dose as well as the saturation of the luminescence intensity related to a donor. The magnetospectroscopy results confirm the presence of two doubly connected Lambda systems in the same way as for epitaxially grown and F-doped ZnSe QWs. If special techniques such as selective implantation through a mask and registration of single-ion impacts are applied on micro-and nanocavities, the ion implantation can be an attractive alternative fluorine doping method for quantum information technology based on fluorine impurities in ZnSe.
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