Journal
PHYSICAL REVIEW B
Volume 86, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.125414
Keywords
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Funding
- MEXT [23710118, 20241023]
- National Research Foundation under NRF RF Award [NRFRF2010-07]
- MOE Tier 2 [MOE2009-T2-1-037]
- NSF [DMR-10-1004147]
- Grants-in-Aid for Scientific Research [23710118, 20241023] Funding Source: KAKEN
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1004147] Funding Source: National Science Foundation
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The G-band Raman intensity is calculated for twisted bilayer graphene as a function of laser excitation energy based on the extended tight binding method. Here we explicitly consider the electron-photon and electron-phonon matrix elements of twisted bilayer graphene to calculate the resonance Raman intensity. The G-band Raman intensity is sensitive to the laser excitation energy and the twisting angle between the layers as a result of folding the electronic energy band structure. The Van Hove energy singularity, which is an electron transition energy between the conduction and valence bands, depends on n - m of the twisting vector (n, m). The relative intensity of the G band as a function of twisting vectors is presented, which should be useful for the experimental identification of the twisting angle.
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