Journal
PHYSICAL REVIEW B
Volume 86, Issue 6, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.064102
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Funding
- Fonds National de la Recherche Luxembourg (FNR)
- Polish National Centre for Research and Development (NCBiR)
- Academy of Finland
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Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.
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