Related references
Note: Only part of the references are listed.Coherent singlet-triplet oscillations in a silicon-based double quantum dot
B. M. Maune et al.
NATURE (2012)
Electron spin coherence exceeding seconds in high-purity silicon
Alexei M. Tyryshkin et al.
NATURE MATERIALS (2012)
Single-Shot Measurement of Triplet-Singlet Relaxation in a Si/SiGe Double Quantum Dot
J. R. Prance et al.
PHYSICAL REVIEW LETTERS (2012)
Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
M. G. Borselli et al.
APPLIED PHYSICS LETTERS (2011)
Spin filling of valley-orbit states in a silicon quantum dot
W. H. Lim et al.
NANOTECHNOLOGY (2011)
Intervalley coupling for interface-bound electrons in silicon: An effective mass study
A. L. Saraiva et al.
PHYSICAL REVIEW B (2011)
Tunable Spin Loading and T1 of a Silicon Spin Qubit Measured by Single-Shot Readout
C. B. Simmons et al.
PHYSICAL REVIEW LETTERS (2011)
Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
N. S. Lai et al.
SCIENTIFIC REPORTS (2011)
Dynamically controlled charge sensing of a few-electron silicon quantum dot
C. H. Yang et al.
AIP ADVANCES (2011)
Theory of valley-orbit coupling in a Si/SiGe quantum dot
Mark Friesen et al.
PHYSICAL REVIEW B (2010)
Quantum dot spin qubits in silicon: Multivalley physics
Dimitrie Culcer et al.
PHYSICAL REVIEW B (2010)
Electron Spin Decoherence in Isotope-Enriched Silicon
Wayne M. Witzel et al.
PHYSICAL REVIEW LETTERS (2010)
Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot
M. Xiao et al.
PHYSICAL REVIEW LETTERS (2010)
Observation of the single-electron regime in a highly tunable silicon quantum dot
W. H. Lim et al.
APPLIED PHYSICS LETTERS (2009)
Realizing singlet-triplet qubits in multivalley Si quantum dots
Dimitrie Culcer et al.
PHYSICAL REVIEW B (2009)
Gate-defined quantum dots in intrinsic silicon
Susan J. Angus et al.
NANO LETTERS (2007)
Excited-state spectroscopy on a nearly closed quantum dot via charge detection
JM Elzerman et al.
APPLIED PHYSICS LETTERS (2004)
Electron spin relaxation times of phosphorus donors in silicon
AM Tyryshkin et al.
PHYSICAL REVIEW B (2003)
Share Paper
