Magnetic impurities in graphane with dehydrogenated channels

We have investigated the electronic and magnetic response of a single Fe atom and a pair of interacting Fe atoms placed in patterned dehydrogenated channels in graphane within the framework of density functional theory. We have considered two channels: armchair and zigzag channels. Fully relaxed calculations have been carried out for three different channel widths. Our calculations reveal that the response to the magnetic impurities is very different for these two channels. We have also shown that one can stabilize magnetic impurities (Fe in the present case) along the channels of bare carbon atoms, giving rise to a magnetic insulator or a spin gapless semiconductor. Our calculations with spin-orbit coupling shows a large in-plane magnetic anisotropy energy for the case of the armchair channel. The magnetic exchange coupling between two Fe atoms placed in the semiconducting channel with an armchair edge is very weakly ferromagnetic whereas a fairly strong ferromagnetic coupling is observed for reasonable separations between Fe atoms in the zigzag-edged metallic channel with the coupling mediated by the bare carbon atoms. The possibility of realizing an ultrathin device with interesting magnetic properties is discussed.