Journal
PHYSICAL REVIEW B
Volume 85, Issue 20, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.201402
Keywords
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Funding
- US Department of Energy, Office of Basic Energy Science, Division of Materials Sciences and Engineering [DE-FG02-07ER46351]
- DMEA/CNN [H94003-10-2-1004]
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By eliminating normal fabrication processes, we preserve the bulk insulating state of calcium-doped Bi2Se3 single crystals in suspended nanodevices, as indicated by the activated temperature dependence of the resistivity at low temperatures. We perform low-energy electron beam irradiation (< 16 keV) and electrostatic gating to control the carrier density and therefore the Fermi level position in the nanodevices. In slightly p-doped Bi2-xCaxSe3 devices, continuous tuning of the Fermi level from the bulk valence band to the band gap reveals an enhancement (> a factor of 10) in the field-effect mobility, which suggests suppressed backscattering expected for the Dirac fermion surface states in the gap of topological insulators.
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