Journal
PHYSICAL REVIEW B
Volume 85, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.155205
Keywords
-
Ask authors/readers for more resources
The combined effect of bulk and interface electron-phonon couplings on the transport properties is investigated in a model for organic semiconductors gated with polarizable dielectrics. While the bulk electron-phonon interaction affects the behavior of mobility in the coherent regime below room temperature, the interface coupling is dominant for the activated high-T contribution of localized polarons. In order to improve the description of the transport properties, the presence of disorder is needed in addition to electron-phonon couplings. The effects of a weak disorder largely increase the activation energies of mobility and induce the small polaron formation at lower values of electron-phonon couplings in the experimentally relevant window 150 K < T < 300 K. The results are discussed in connection with experimental data of rubrene organic field-effect transistors.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available