Journal
PHYSICAL REVIEW B
Volume 85, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.113302
Keywords
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Funding
- NEDO, Japan
- European Community [256695]
- Axpo Naturstrom Fonds, Switzerland
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Low-temperature annealing of hydrogenated amorphous silicon (a-Si:H) is investigated. An identical energy barrier is found for the reduction of deep defects in the bulk of a-Si:H films and at the interface such layers form with crystalline Si (c-Si) surfaces. This finding gives direct physical evidence that the defects determining a-Si:H/c-Si interface recombination are silicon dangling bonds and that also kinetically this interface has no unique features compared to the a-Si:H bulk.
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