Journal
PHYSICAL REVIEW B
Volume 86, Issue 16, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.165207
Keywords
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Funding
- IWT-Vlaanderen through the ISIMADE
- FWO-Vlaanderen [G.0191.08]
- BOF-NOI of the University of Antwerp
- Hercules foundation
- GOA project XANES meets ELNES of the University of Antwerp
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The hydrogen interstitial and the substitutional Al-Zn, Ga-Zn, and In-Zn are all shallow donors in ZnO and lead to n-type conductivity. Although shallow donors are expected to repel each other, we show by first-principles calculations that in ZnO these shallow donor impurities attract and form a complex, leading to a donor level deep in the band gap. This puts a limit on the n-type conductivity of (Al,Ga,In)-doped ZnO in the presence of hydrogen.
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