Related references
Note: Only part of the references are listed.Effect of MgO Barrier Insertion on Spin-Dependent Transport Properties of CoFe/n-GaAs Heterojunctions
Takafumi Akiho et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2012)
Unconventional Hanle effect in a highly ordered CoFe/MgO/n-Si contact: non-monotonic bias and temperature dependence and sign inversion of the spin signal
Kun-Rok Jeon et al.
NEW JOURNAL OF PHYSICS (2012)
Electrical spin accumulation with improved bias voltage dependence in a crystalline CoFe/MgO/Si system
Kun-Rok Jeon et al.
APPLIED PHYSICS LETTERS (2011)
Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
S. P. Dash et al.
PHYSICAL REVIEW B (2011)
Electrical creation of spin accumulation in p-type germanium
H. Saito et al.
SOLID STATE COMMUNICATIONS (2011)
In-plane anisotropy of tunneling magnetoresistance and spin polarization in lateral spin injection devices with (Ga,Mn)As/GaAs spin-Esaki diode contacts
M. Ciorga et al.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2010)
Electrical spin injection into moderately doped silicon enabled by tailored interfaces
R. Jansen et al.
PHYSICAL REVIEW B (2010)
Electrical Spin Injection into Silicon Using MgO Tunnel Barrier
Tomoyuki Sasaki et al.
APPLIED PHYSICS EXPRESS (2009)
Tunneling anisotropic spin polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices
A. Einwanger et al.
APPLIED PHYSICS LETTERS (2009)
Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier
Y. Ando et al.
APPLIED PHYSICS LETTERS (2009)
Electrical creation of spin polarization in silicon at room temperature
Saroj P. Dash et al.
NATURE (2009)
Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions
A. Matos-Abiague et al.
PHYSICAL REVIEW B (2009)
Anisotropic spin relaxation in graphene
N. Tombros et al.
PHYSICAL REVIEW LETTERS (2008)
Tunneling anisotropic magnetoresistance in Multilayer-(Co/Pt)/AlOx/Pt structures
B. G. Park et al.
PHYSICAL REVIEW LETTERS (2008)
Bias voltage dependence of tunneling anisotropic magnetoresistance in magnetic tunnel junctions with MgO and Al2O3 tunnel barriers
Li Gao et al.
PHYSICAL REVIEW LETTERS (2007)
Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions
J. Moser et al.
PHYSICAL REVIEW LETTERS (2007)
Semiconductor spintronics
Jaroslav Fabian et al.
ACTA PHYSICA SLOVACA (2007)
Prospect for room temperature tunneling anisotropic magnetoresistance effect: Density of states anisotropies in CoPt systems
AB Shick et al.
PHYSICAL REVIEW B (2006)
Origin of the tunnel anisotropic magnetoresistance in Ga1-xMnxAs/ZnSe/Ga1-xMnxAs magnetic tunnel junctions of II-VI/III-V heterostructures -: art. no. 086604
H Saito et al.
PHYSICAL REVIEW LETTERS (2005)
Very large tunneling anisotropic magnetoresistance of a (Ga,Mn)As/GaAs/(Ga,Mn)As stack -: art. no. 027203
C Rüster et al.
PHYSICAL REVIEW LETTERS (2005)
Tunneling anisotropic magnetoresistance:: A spin-valve-like tunnel magnetoresistance using a single magnetic layer -: art. no. 117203
C Gould et al.
PHYSICAL REVIEW LETTERS (2004)
Share Paper
