Phase diagrams of Bi1-xSbx thin films with different growth orientations

A closed-form model is developed to evaluate the band-edge shift caused by quantum confinement for a two-dimensional nonparabolic carrier pocket. Based on this model, the symmetries and the band shifts of different carrier pockets are evaluated for Bi1-xSbx thin films that are grown along different crystalline axes. The phase diagrams for the Bi1-xSbx thin film systems with different growth orientations are calculated and analyzed.