Journal
PHYSICAL REVIEW B
Volume 85, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.125309
Keywords
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Funding
- DFG [AS327/2-2]
- DFG-JST Research Unit Topological Electronics
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The field of topological insulators (TIs) is rapidly growing. Concerning possible applications, the search for materials with an easily controllable TI phase is a key issue. The quantum spin Hall effect, characterized by a single pair of helical edge modes protected by time-reversal symmetry, has been demonstrated in HgTe-based quantum wells (QWs) with an inverted band gap. We analyze the topological properties of a generically coupled HgTe-based double QW and show how in such a system a TI phase can be driven by an interlayer bias voltage, even when the individual layers are noninverted. We argue that this system allows for (layer-)pseudospin-based physics similar to that in bilayer graphene but with the crucial absence of a valley degeneracy.
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