Journal
PHYSICAL REVIEW B
Volume 85, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.125111
Keywords
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Funding
- JST-CREST
- JSPS
- MEXT of Japan
- MOST
- CAS
- NSFC of China
- University of Wisconsin-Madison
- Grants-in-Aid for Scientific Research [23224010, 24654096] Funding Source: KAKEN
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We have performed angle-resolved photoemission spectroscopy of CuxBi2Se3 as a function of Cu doping (x = 0.0-0.25) to investigate the doping-induced evolution of the electronic structure. We found that the topological surface state is preserved even in the heavy-doping region (x = 0.25), indicative of the robustness of the surface state against doping and impurities. The estimated carrier concentration is far smaller than that expected from a simple intercalation picture, and saturates at x similar to 0.1 where superconductivity emerges. This indicates that the carrier concentration responsible for superconductivity is dominated by a subtle balance between two competing processes of electron and hole doping.
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