Journal
PHYSICAL REVIEW B
Volume 84, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.245302
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Funding
- French National Agency (ANR) [ANR-08-NANO-031-01]
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Based on the breakdown of Friedel's law, resonant x-ray diffraction is shown to be a suitable method to determine polarity of non-centrosymmetrical wurtzite gallium nitride (GaN) nanowires (NWs) at a macroscopic scale. It is demonstrated that such GaN NWs grown by plasma-assisted molecular beam epitaxy on bare Si(111) are N-polar, consistent with results obtained by convergent beam electron diffraction. The N-polarity feature is attributed to the formation of a thin SixN1-x layer on the Si surface before growth. The use of a thin AlN buffer layer does not modify the GaN NW polarities, suggesting that NWs actually grow between the AlN grains rather than on top of them.
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